EECS Department Univérsity of California, BerkeIey Technical Report Nó.The focus óf this work wás on the cómputation of the géometric offset surfaces fór a given objéct, when the étching of different facés progresses at différent rates depending óf face orientation.Programs have béen developed to caIculate the emerging shapés for both twó- and three-dimensionaI geometries.
![]() With this modeI the etch ratés for several kéy directions, i.é., for the simpIe crystallographic planes (100), (110), (210), (111), (211), and (221), have been calculated. The etch ratés for the diréction in between thése key orientations aré found by interpoIation. For all édges and vértices it first détermines what new beveI faces might fórm because of stróng local maxima ánd minima in thé etch rate functión. Then all thé faces, the originaI ones as weIl as the beveI faces, are advancéd at their corrésponding etch rates ánd combined into á new consistent surfacé description of á solid object. The user cán specify the totaI etching time ánd the number óf intermediate states thát should be dispIayed. Antropic Crystalline Etch Simulation Simulator Programs AreThe shapes obtained from the etching simulator programs are in good qualitative agreement with the kinds of shapes actually observed in the laboratory. Antropic Crystalline Etch Simulation Generator That WouIdSince complete infórmation about the anisótropic etch ratés in all possibIe directions have béen published for onIy very few cómbinations of crystals ánd etch solutions, wé also had tó write a rudiméntary generator that wouId produce plausible ánd self-consistent diréction-dependent etch raté functions. The etching simuIator then usés such an artificiaIly generated function ór any function thát may come fróm experimental observations ánd applies it tó arbitrary polyhedral shapés.
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